首尔，9月29日：三星电子高管周二表示，预计明年高带宽存储器（HBM）将占动态随机存取存储器（DRAM）芯片制造商总晶圆产能的近30%，而目前这一比例约为20%。
SEOUL, Sept 29 : A Samsung Electronics executive said on Tuesday that high-bandwidth memory (HBM) is expected to account for nearly 30 per cent of Dynamic Random-Access Memory (DRAM) chipmakers' total wafer capacity next year, up from about 20 per cent currently.
三星电子执行副总裁金泰洙表示，HBM和标准DRAM争夺相同的晶圆产能，这意味着扩大HBM产量可能会限制标准DRAM的供应。
Samsung Electronics Executive Vice President Kim Taewoo said HBM and standard DRAM compete for the same wafer capacity, meaning expanding HBM output could constrain standard DRAM supply.
HBM是人工智能计算的关键组件，由垂直堆叠的存储芯片组成，使处理器能够以高速访问大量数据。该市场由韩国的SK海力士、三星电子以及美国的美光科技主导。
HBM is a crucial component for AI computing, consisting of vertically stacked memory chips that allow processors to access vast amounts of data at high speeds. The market is dominated by South Korea's SK Hynix and Samsung Electronics, as well as US-based Micron Technology.