在长鑫存储（CXMT）宣布其在DRAM制造领域取得4F²架构突破后，相关存储芯片股票价格大幅下跌。
2026年10月13日，三星电子（Samsung Electronics）和SK海力士（SK Hynix）的股价下跌超过7%。
Memory Chip Stocks Slump Following CXMT's 4F² Architecture Leap Claim Shares of Samsung Electronics and SK hynix plunged over 7% on October 13, 2026, following claims by ChangXin Memory Technologies (CXMT) of an architectural breakthrough in DRAM manufacturing.
在10月9日至10日于上海举行的会议上，长鑫存储首席执行官曹侃宇表示，该公司已开发出用于4F²架构的垂直环绕栅极晶体管，并计划在今年底前推出服务器用DDR5 RDIMM产品。
At a Shanghai conference on October 9–10, CXMT CEO Cao Kanyu stated the company developed vertical surround gate transistors for a 4F² architecture, with plans to launch server DDR5 RDIMMs by year-end.
这一时间表可能使长鑫存储比三星预计的2028年商业化时间提前约两年。这一进展被视为应对美国对极紫外光刻设备限制的一种策略。
This timeline potentially puts CXMT roughly two years ahead of Samsung's projected 2028 commercialization schedule. The move is viewed as a workaround to U.S. restrictions on extreme ultraviolet lithography equipment.
然而，行业分析师警告称，实现盈利产量和稳定大规模生产尚未得到验证，因为长鑫存储尚未披露具体的技术规格或产量数据。
However, industry analysts caution that achieving profitable yields and stable mass production remains unproven, as CXMT has yet to disclose specific technical specifications or yield rates.