三星电子将使用台积电的3纳米工艺为英伟达下一代定制高带宽内存（HBM）芯片生产基底晶圆，首尔经济日报周日报道。
Samsung Electronics will use TSMC's 3-nanometre process to produce base dies for Nvidia's next-generation custom high-bandwidth memory (HBM) chips, the Seoul Economic Daily reported on Sunday.
三星电子将使用台积电的3纳米工艺为英伟达下一代定制高带宽内存（HBM）芯片生产基底晶圆，首尔经济日报周日报道。据报道，此举将标志着三星首次在HBM制造阶段与台积电合作。
Samsung Electronics will use TSMC's 3-nanometre process to produce base dies for Nvidia's next-generation custom high-bandwidth memory (HBM) chips, the Seoul Economic Daily reported on Sunday. The move would mark the first time Samsung has worked with the Taiwanese contract chipmaker at the HBM manufacturing stage, according to the report.
首尔经济日报援引业内人士的话称，英伟达已要求三星、SK海力士和美光科技使用台积电的工艺为NVHBM基底晶圆生产，并使用第六代DRAM技术为核心晶圆生产。
Nvidia has asked Samsung, SK Hynix and Micron Technology to use TSMC's process for NVHBM base dies, and sixth-generation DRAM technology for its core dies, the newspaper said, citing industry sources.
英伟达在8月份发布的NVHBM技术将英伟达的定制内存控制器集成到基底晶圆中，旨在标准化多家内存供应商的实施方案。
NVHBM, unveiled in August, integrates Nvidia's custom memory controller into the base die and is aimed at standardising implementation across multiple memory suppliers, according to the company.
首尔经济日报称，三星在内部审查后接受了英伟达的要求，但计划保留其内部生产模式用于标准HBM和其他客户的定制产品。
Samsung accepted Nvidia's requirements after an internal review but plans to retain its in-house production model for standard HBM and custom products for other customers, Seoul Economic Daily said.
首尔经济日报援引一位匿名消息人士的话称，三星还在评估其自身代工厂是否能够在需求超过台积电产能时生产NVHBM基底晶圆。
It is also assessing whether its own foundry could produce NVHBM base dies if demand exceeds TSMC's capacity, the newspaper quoted an unnamed source as saying.